PART |
Description |
Maker |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate IGBT 0.5 A @ 25 600 V From old datasheet system
|
ONSEMI[ON Semiconductor]
|
MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
ST704 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SM746 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SM401 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
http:// POLYFET[Polyfet RF Devices]
|
SR341 SM705 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|